Substrate processing method

ABSTRACT

A substrate processing method for a substrate having a photosensitive film on a top surface thereof, includes cleaning a back surface of the substrate after the formation of the photosensitive film and before exposure processing; transporting the substrate to a temperature adjuster such as a cooling unit, while holding the substrate with a first holder; adjusting a temperature of the substrate with the temperature adjuster; transporting the substrate from the temperature adjuster to the exposure device with a second holder; and transporting the substrate after the exposure processing to a first platform while holding the substrate with a third holder.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a substrate processing apparatus and asubstrate processing method for subjecting a substrate to processing.

2. Description of the Background Art

Substrate processing apparatuses are used to subject various substratessuch as semiconductor substrates, substrates for liquid crystaldisplays, plasma displays, optical disks, magnetic disks,magneto-optical disks, photomasks, and other substrates to various typesof processing.

In such substrate processing apparatuses, a substrate before exposureprocessing is subjected to various types of film formation processing.However, a back surface of the substrate may be contaminated in theprocess of film formation processing. In this case, irregularities areformed on the back surface of the substrate due to contaminants,resulting in an unstable state of the substrate. This may cause adimensional error and a shape defect of an exposure pattern during theexposure processing.

In order to avoid such problems, a substrate processing apparatus of JP2007-214365 A is provided with a back surface cleaning unit that cleansthe back surface of the substrate before exposure processing, forexample. This allows contaminants adhering to the back surface of thesubstrate before exposure processing to be removed.

With recent improvements in the density and integration of devices,making finer resist patterns has been required. Resolution performance,which is a key to obtain finer resist patterns, of an exposure devicedepends on the wavelength of a light source of the exposure device.Exposure techniques that use EUV (extra-ultraviolet) having an extremelyshort wavelength of about 13 nm have been proposed. Since the EUV iseasily absorbed by the air, exposure processing using the EUV needs tobe performed in a state whose degree of vacuum is high. Therefore, thesubstrate in a clean state needs to be carried in the exposure devicefor performing the exposure processing using the EUV.

BRIEF SUMMARY OF THE INVENTION

An object of the present invention is to provide a substrate processingapparatus and a substrate processing method capable of carrying asubstrate in a clean state in an exposure device.

(1) According to an aspect of the present invention, a substrateprocessing apparatus that is arranged adjacent to an exposure deviceincludes a processing section for subjecting a top surface of asubstrate to processing, and an interface for receiving and transferringthe substrate between the processing section and the exposure device,wherein the processing section includes a photosensitive film formingunit arranged to form a photosensitive film made of a photosensitivematerial on the top surface of the substrate, the interface includes aback surface cleaning unit arranged to clean a back surface of thesubstrate after formation of the photosensitive film by thephotosensitive film forming unit and before exposure processing by theexposure device, and a transport device that includes a plurality ofholders, each of which transports the substrate while holding thesubstrate, and the transport device is configured to transport thesubstrate after back surface cleaning by the back surface cleaning unitto the exposure device while holding the substrate after the backsurface cleaning using one or a plurality of holders of the plurality ofholders, and transport the substrate after the exposure processing fromthe exposure device while holding the substrate after the exposureprocessing using other holders of the plurality of holders.

In the substrate processing apparatus, the photosensitive film made ofthe photosensitive material is formed on the top surface of thesubstrate by the photosensitive film forming unit. The back surface ofthe substrate is cleaned by the back surface cleaning unit after theformation of the photosensitive film and before the exposure processingby the exposure device. The substrate after the cleaning is transportedto the exposure device while being held by the one or plurality ofholders of the plurality of holders of the transport device. Thesubstrate after the exposure processing is transported from the exposuredevice while being held by the other holders of the plurality of holdersof the transport device.

As described above, the different holders are used for holding andtransporting the substrate after the back surface cleaning to theexposure device and for holding and transporting the substrate after theexposure processing from the exposure device. Therefore, even thoughcontaminants adhere to the substrate after the exposure processing, thecontaminants will not adhere to the holder that holds the substrateafter the back surface cleaning. Thus, the substrate in a clean stateafter the back surface cleaning can be carried in the exposure device.This prevents the inside of the exposure device from being contaminated.Accordingly, even when the exposure processing is performed in vacuum inthe exposure device, a degree of vacuum is prevented from being lowereddue to the contaminants. In addition, the inside of the exposure deviceis less contaminated, thus reducing a period of time required forremoving the contaminants. This prevents a lower operation rate of thesubstrate processing apparatus.

(2) The interface may further include a temperature adjuster arranged toadjust a temperature of the substrate, the one or plurality of holdersmay include a first holder arranged to transport the substrate beforethe exposure processing from the temperature adjuster to the exposuredevice while holding the substrate before the exposure processing, and asecond holder arranged to transport the substrate after the back surfacecleaning from the back surface cleaning unit to the temperature adjusterwhile holding the substrate after the back surface cleaning.

In this case, the substrate after the back surface cleaning istransported from the back surface cleaning unit to the temperatureadjuster while being held by the second holder. The temperature of thesubstrate is adjusted by the temperature adjuster. The substrate afterthe temperature adjustment is transported from the temperature adjusterto the exposure device while being held by the first holder.Accordingly, the substrate can be prevented from being deformed at thetime of being carried in the exposure device due to a difference intemperature between the inside and outside of the exposure device, andthe back surface of the substrate can be prevented from beingcontaminated.

The different holders are used for holding and transporting thesubstrate from the back surface cleaning processing unit to thetemperature adjuster and for holding and transporting the substrate fromthe temperature adjuster to the exposure device. Thus, the temperatureof the holder that holds the substrate whose temperature has beenadjusted is kept constant. This prevents the temperature of thesubstrate from changing when the substrate is transported from thetemperature adjuster to the exposure device.

(3) The temperature adjuster may include a housing arranged to surroundthe substrate, and a gas supplier arranged to supply dry gas into thehousing.

In this case, dry gas is supplied into the housing of the temperatureadjuster. This causes the substrate to be reliably dried. Therefore, thesubstrate in a completely dry state can be carried in the exposuredevice. This reliably prevents a degree of vacuum from being loweredeven when the exposure processing is performed in vacuum in the exposuredevice.

(4) The interface may further include a platform on which the substrateafter the exposure processing is placed, and the other holders mayinclude a third holder arranged to transport the substrate from theexposure device to the platform while holding the substrate.

In this case, the substrate is transported from the exposure device tothe platform while being held by the third holder. Since the substrateafter the exposure processing can be temporarily kept on standby, aperiod of time for transporting the substrate before the exposureprocessing and a period of time for transporting the substrate after theexposure processing can be adjusted. As a result, transport efficiencyof the substrate can be improved and a period of time from the exposureprocessing to the subsequent processing can be appropriately adjusted.

(5) The transport device may include first and second transport units,the first transport unit includes the first holder, the second holderand the third holder, the second transport unit may include a fourthholder arranged to transport the substrate after the formation of thephotosensitive film from the processing section to the interface whileholding the substrate after the formation of the photosensitive film,and a fifth holder arranged to transport the substrate after theexposure processing while holding the substrate after the exposureprocessing in the interface.

In this case, the substrate after the formation of the photosensitivefilm is transported from the processing section to the interface whilebeing held by the fourth holder of the second transport unit. Thesubstrate after the exposure processing is transported in the interfacewhile being held by the fifth holder of the second transport unit.Accordingly, the first transport unit transports the substrate from theback surface cleaning processing unit to the temperature adjuster, fromthe temperature adjuster to the exposure device, and from the exposuredevice to the platform, and the second transport unit transports thesubstrate from the processing section to the interface and in theinterface. This allows the first transport unit and the second transportunit to be concurrently operated. As a result, the clean substrate canbe carried in the exposure device without reducing transport efficiencyof the substrate.

(6) The third holder may be arranged below the first and second holders.When the substrate after the exposure processing is less clean than thesubstrate before the exposure processing, contaminants may drop from thesubstrate after the exposure processing or the third holder that holdsthe substrate after the exposure processing. Even in such a case, thefirst and second holders are arranged above the third holder, so thatthe contaminants will not adhere to the substrate before the exposureprocessing held by the first and second holders. This reliably preventsthe substrate to be carried in the exposure device from beingcontaminated.

(7) The first holder may be arranged above the second holder. When aliquid remains on the substrate after the back surface cleaning, theliquid may drop from the substrate after the back surface cleaning orthe second holder that holds the substrate after the back surfacecleaning. Even in such a case, the first holder is arranged above thesecond holder, so that the liquid will not adhere to the substrate afterthe temperature adjustment held by the first holder. Accordingly, thetemperature of the substrate after the temperature adjustment can beprevented from changing, and the substrate with the liquid adheringthereto can be prevented from being carried in the exposure device.

(8) The transport device may include first and second transport units,the first transport unit may include the first holder and the thirdholder, the second transport unit may include the second holder, afourth holder arranged to transport the substrate after the formation ofthe photosensitive film from the processing section to the interfacewhile holding the substrate after the formation of the photosensitivefilm, and a fifth holder arranged to transport the substrate after theformation of the photosensitive film to the back surface cleaning unitwhile holding the substrate after the formation of the photosensitivefilm in the interface.

In this case, the substrate after the formation of the photosensitivefilm is transported from the processing section to the interface whilebeing held by the fourth holder of the second transport unit. Thesubstrate after the formation of the photosensitive film is transportedto the back surface cleaning unit while being held by the fifth holderof the second transport unit in the interface. Accordingly, the firsttransport unit transports the substrate from the temperature adjuster tothe exposure device and from the exposure device to the platform, andthe second transport unit transports the substrate from the back surfacecleaning processing unit to the temperature adjuster, from theprocessing section to the interface, and to the back surface cleaningunit in the interface. This allows the first transport unit and thesecond transport unit to be concurrently operated. As a result, theclean substrate can be carried in the exposure device without reducingtransport efficiency of the substrate.

(9) The first holder may be arranged above the third holder. When thesubstrate after the exposure processing is less clean than the substratebefore the exposure processing, contaminants may drop from the substrateafter the exposure processing or the third holder that holds thesubstrate after the exposure processing. Even in such a case, the firstholder is arranged above the third holder, so that the contaminants willnot adhere to the substrate before the exposure processing held by thefirst holder. This reliably prevents the substrate to be carried in theexposure device from being contaminated.

(10) The second holder may be arranged above the fourth and fifthholders. When the substrate before the back surface cleaning held by thefourth or fifth holder is contaminated, the contaminants may drop fromthe substrate before the back surface cleaning or the fourth or fifthholder that holds the substrate before the back surface cleaning. Evenin such a case, the second holder is arranged above the fourth and fifthholders, so that the contaminants will not adhere to the substrate afterthe back surface cleaning held by the second holder. This reliablyprevents the substrate to be carried in the exposure device from beingcontaminated.

(11) According to another aspect of the present invention, a substrateprocessing method for subjecting a substrate to processing using asubstrate processing apparatus arranged adjacent to an exposure device,wherein the substrate processing apparatus includes a photosensitivefilm forming unit, a back surface cleaning unit and a transport deviceincluding a plurality of holders, and the substrate processing methodincludes the steps of forming a photosensitive film made of aphotosensitive material on a top surface of the substrate by thephotosensitive film forming unit, cleaning a back surface of thesubstrate by the back surface cleaning unit after the formation of thephotosensitive film and before exposure processing by the exposuredevice, transporting the substrate after the cleaning to the exposuredevice while holding the substrate after the cleaning using one or aplurality of holders of the plurality of holders of the transportdevice, and transporting the substrate after the exposure processingfrom the exposure device while holding the substrate after the exposureprocessing using other holders of the plurality of holders of thetransport device.

In the substrate processing method, the photosensitive film made of thephotosensitive material is formed on the top surface of the substrate bythe photosensitive film forming unit. The back surface of the substrateis cleaned by the back surface cleaning unit after the formation of thephotosensitive film and before the exposure processing by the exposuredevice. The substrate after the cleaning is transported to the exposuredevice while being held by the one or plurality of holders of theplurality of holders of the transport device. The substrate after theexposure processing is transported from the exposure device while beingheld by the other holders of the plurality of holders of the transportdevice.

As described above, the different holders are used for holding andtransporting the substrate after the back surface cleaning to theexposure device and for holding and transporting the substrate after theexposure processing from the exposure device. Therefore, even thoughcontaminants adhere to the substrate after the exposure processing, thecontaminants will not adhere to the holder that holds the substrateafter the back surface cleaning. Thus, the substrate in a clean stateafter the back surface cleaning can be carried in the exposure device.This prevents the inside of the exposure device from being contaminated.Accordingly, even when the exposure processing is performed in vacuum inthe exposure device, a degree of vacuum is prevented from being lowereddue to the contaminants. In addition, the inside of the exposure deviceis less contaminated, thus reducing a period of time required forremoving the contaminants. This prevents a lower operation rate of thesubstrate processing apparatus.

Other features, elements, characteristics, and advantages of the presentinvention will become more apparent from the following description ofpreferred embodiments of the present invention with reference to theattached drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a plan view of a substrate processing apparatus according to afirst embodiment;

FIG. 2 is a schematic side view showing one side of the substrateprocessing apparatus of FIG. 1;

FIG. 3 is a schematic side view showing the other side of the substrateprocessing apparatus of FIG. 1;

FIG. 4 is a schematic side view of an interface block viewed from anexposure device;

FIG. 5 is a diagram for use in illustrating the configuration of a backsurface cleaning processing unit;

FIG. 6 (a) is a top view of a chuck opening/closing device and chucksshown in FIG. 5;

FIG. 6 (b) is a sectional view of the chuck opening/closing device andthe chucks shown in FIG. 6 (a) taken along the line A-A;

FIG. 7 is a flowchart showing operations of hands of an interfacetransport mechanism;

FIG. 8 is a flowchart showing operations of hands of an interfacetransport mechanism;

FIG. 9 is a diagram showing a transport path of a substrate in theinterface block;

FIG. 10 is a schematic side view of an interface block viewed from theexposure device in a second embodiment;

FIG. 11 is a flowchart showing operations of hands in the interfacetransport mechanism in the second embodiment;

FIG. 12 is a flowchart showing operations of hands in the interfacetransport mechanism in the second embodiment; and

FIG. 13 is a diagram showing a transport path of the substrate in theinterface block in the second embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Description will be made of a substrate processing apparatus accordingto embodiments of the present invention with reference to the drawings.In the following description, substrates refer to semiconductorsubstrates, substrates for liquid crystal displays, plasma displays,optical disks, magnetic disks, magneto-optical disks, photomasks, glasssubstrates for photomasks, or other substrates.

[1] First Embodiment

(1) Configuration of Substrate Processing Apparatus

FIG. 1 is a plan view of a substrate processing apparatus according to afirst embodiment. FIG. 1 and FIGS. 2 to 4 described below areaccompanied by arrows that respectively indicate X, Y, and Z directionsperpendicular to one another for clarity of a positional relationship.The X and Y directions are perpendicular to each other within ahorizontal plane, and the Z direction corresponds to a verticaldirection. In each of the directions, the direction of the arrow isdefined as a + direction, and the opposite direction is defined as a −direction. The rotation direction about the Z direction is defined as aθ direction.

As shown in FIG. 1, the substrate processing apparatus 500 includes anindexer block 1, an anti-reflection film processing block 2, a resistfilm processing block 3, a development processing block 4 and aninterface block 5. An exposure device 6 is arranged adjacent to theinterface block 5. The exposure device 6 is a vacuum exposure device inthe present embodiment.

Hereinafter, the indexer block 1, the anti-reflection film processingblock 2, the resist film processing block 3, the development processingblock 4, and the interface block 5 will be referred to as processingblocks.

The indexer block 1 includes a main controller (control unit) 91 thatcontrols operations of the processing blocks, and includes a pluralityof carrier platforms 92 and an indexer robot IR. The indexer robot IR isprovided with hands IRH1, IRH2 one above the other for receiving andtransferring the substrate W.

The anti-reflection film processing block 2 includes thermal processinggroups 100 and 101 for anti-reflection film, a coating processing group20 for anti-reflection film, and a first central robot CR1. The coatingprocessing group 20 for anti-reflection film is provided opposite to thethermal processing groups 100 and 101 for anti-reflection film with thefirst central robot CR1 interposed therebetween. The first central robotCR1 is provided with hands CRH1, CRH2 one above the other for receivingand transferring the substrate W.

A partition wall 11 for shielding the atmosphere is provided between theindexer block 1 and the anti-reflection film processing block 2. Thepartition wall 11 is provided with substrate platforms PASS1 and PASS2one above the other in close proximity that are used for receiving andtransferring the substrate W between the indexer block 1 and theanti-reflection film processing block 2. The upper substrate platformPASS1 is used when the substrate W is transported from the indexer block1 to the anti-reflection film processing block 2. The lower substrateplatform PASS2 is used when the substrate W is transported from theanti-reflection film processing block 2 to the indexer block 1.

The substrate platforms PASS1, PASS2 are each provided with an opticalsensor (not shown) that detects the presence or absence of the substrateW. This allows for determination as to whether or not the substrate W isplaced on the substrate platform PASS1 or PASS2. In addition, thesubstrate platforms PASS1, PASS2 each have a plurality of support pinssecured thereto. Note that substrate platforms PASS3 to PASS9 that willbe described below are each similarly provided with an optical sensorand support pins.

The resist film processing block 3 includes thermal processing groups110 and 111 for resist film, a coating processing group 30 for resistfilm, and a second central robot CR2. The coating processing group 30for resist film is provided opposite to the thermal processing groups110 and 111 for resist film with the second central robot CR2 interposedtherebetween. The second central robot CR2 has hands CRH3, CRH4 providedone above the other used for receiving and transferring the substrate W.

A partition wall 12 for shielding the atmosphere is provided between theanti-reflection film processing block 2 and the resist film processingblock 3. The partition wall 12 is provided with the substrate platformsPASS3, PASS4 one above the other in close proximity that are used forreceiving and transferring the substrate W between the anti-reflectionfilm processing block 2 and the resist film processing block 3. Theupper substrate platform PASS3 is used when the substrate W istransported from the anti-reflection film processing block 2 to theresist film processing block 3, and the lower substrate platform PASS4is used when the substrate W is transported from the resist filmprocessing block 3 to the anti-reflection film processing block 2.

The development processing block 4 includes a thermal processing group120 for development, a thermal processing group 121 for post-exposurebake, a development processing group 40, and a third central robot CR3.The development processing block 4 is provided adjacent to the interfaceblock 5 and includes substrate platforms PASS7 as described below. Thedevelopment processing group 40 is provided opposite to the thermalprocessing group 120 for development and the thermal processing group121 for post-exposure bake with the third central robot CR3 interposedtherebetween. The third central robot CR3 has hands CRH5, CRH6 providedone above the other used for receiving and transferring the substrate W.

A partition wall 13 for shielding the atmosphere is provided between theresist film processing block 3 and the development processing block 4.The partition wall 13 has substrate platforms PASS5, PASS6 provided oneabove the other in close proximity that receive and transfer thesubstrate W between the resist film processing block 3 and thedevelopment processing block 4. The upper substrate platform PASS5 isused when the substrate W is transported from the resist film processingblock 3 to the development processing block 4 and the lower substrateplatform PASS6 is used when the substrate W is transported from thedevelopment processing block 4 to the resist film processing block 3.

The interface block 5 includes a back surface cleaning processing unitRSW, interface transport mechanisms IFR1, IFR2, an edge exposure unitEEW, a sending buffer unit SBF, a return buffer unit RBF, substrateplatforms PASS8, PASS9, and a cooling unit (cooling plate) CP. The backsurface cleaning processing unit RSW subjects a back surface of thesubstrate W before exposure processing to cleaning processing and dryingprocessing. Here, the back surface of the substrate W refers to asurface on the opposite side of the surface having various films formedthereon by the processing blocks. Details of the back surface cleaningprocessing unit RSW will be described below.

The interface transport mechanism IFR2 is provided with hands H21, H22(see FIG. 4, described below) one above the other for receiving andtransferring the substrate W, and the interface transport mechanism IFR1is provided with hands H11, H12, H13 (see FIG. 4, described below) oneabove another for receiving and transferring the substrate W. Details ofthe interface block 5 will be described below.

In the substrate processing apparatus 500 according to the presentembodiment, the indexer block 1, the anti-reflection film processingblock 2, the resist film processing block 3, the development processingblock 4 and the interface block 5 are sequentially arranged side by sidealong the Y-direction.

FIG. 2 is a schematic side view showing one side of the substrateprocessing apparatus 500 of FIG. 1, and FIG. 3 is a schematic side viewshowing the other side of the substrate processing apparatus 500 ofFIG. 1. FIG. 2 mainly shows components provided in a region along oneside surface of the substrate processing apparatus 500 (hereinafterreferred to as the +X side), and FIG. 3 mainly shows components providedin a region along the other side surface of the substrate processingapparatus 500 (hereinafter referred to as the −X side).

The configuration on the +X side of the substrate processing apparatus500 will be first described with reference to FIG. 2. As illustrated inFIG. 2, the coating processing group 20 for anti-reflection film (seeFIG. 1) in the anti-reflection film processing block 2 has a verticalstack of three coating units BARC. Each of the coating units BARCincludes a spin chuck 21 for rotating the substrate W with the substrateW held in a horizontal attitude by suction, and a supply nozzle 22 thatsupplies a coating liquid for anti-reflection film to the substrate Wheld on the spin chuck 21.

The coating processing group 30 for resist film (see FIG. 1) in theresist film processing block 3 has a vertical stack of three coatingunits RES. Each of the coating units RES includes a spin chuck 31 forrotating the substrate W with the substrate W held in a horizontalattitude by suction, and a supply nozzle 32 that supplies a coatingliquid for resist film to the substrate W held on the spin chuck 31.

The development processing group 40 (see FIG. 1) in the developmentprocessing block 4 has a vertical stack of five development processingunits DEV. Each of the development processing units DEV includes a spinchuck 41 for rotating the substrate W with the substrate W held in ahorizontal attitude by suction, and a supply nozzle 42 for supplying adevelopment liquid to the substrate W held on the spin chuck 41.

The interface block 5 has a vertical stack of the edge exposure unit EEWand the back surface cleaning processing unit RSW on the +X side. Theedge exposure unit EEW includes a spin chuck 51 for rotating thesubstrate W with the substrate W held in a horizontal attitude bysuction, and a light irradiator 52 for exposing an edge of the substrateW held on the spin chuck 51.

The interface block 5 has a vertical stack of the sending buffer unitSBF, the return buffer unit RBF, the substrate platforms PASS8, PASS9,and the cooling unit CP at substantially the center thereof in theX-direction (see FIG. 4 described below). FIG. 2 shows part of thesending buffer unit SBF, the return buffer unit RBF, the substrateplatforms PASS8, PASS9, and the cooling unit CP.

The configuration on the −X side of the substrate processing apparatus500 will be then described with reference to FIG. 3. As illustrated inFIG. 3, each of the thermal processing groups 100 and 101 foranti-reflection film in the anti-reflection film processing block 2 hasa stack of two heating units (hot plates) HP and two cooling units(cooling plates) CP. Each of the thermal processing groups 100 and 101for anti-reflection film has a local controller LC for controlling therespective temperatures of the heating units HP and the cooling units CParranged in its uppermost part.

Each of the thermal processing groups 110 and 111 for resist film in theresist film processing block 3 has a stack of two heating units HP andtwo cooling units CP. Each of the thermal processing groups 110 and 111for resist film also has a local controller LC for controlling therespective temperatures of the heating units HP and the cooling units CParranged in its uppermost part.

The thermal processing group 120 for development in the developmentprocessing block 4 has a vertical stack of two heating units HP and twocooling units CP, and the thermal processing group 121 for post-exposurebake has a vertical stack of the substrate platform PASS7, two heatingunits HP and two cooling units CP. Each of the thermal processing group120 for development and the thermal processing group 121 forpost-exposure bake also has a local controller LC for controlling therespective temperatures of the heating units HP and the cooling units CParranged in its uppermost part.

Similarly to FIG. 2, FIG. 3 shows part of the edge exposure unit EEW,the sending buffer unit SBF, the return buffer unit RBF, the substrateplatforms PASS8, PASS9, and the cooling unit CP.

Next, description will be made of details of the interface block 5 withreference to FIG. 4. FIG. 4 is a schematic side view of the interfaceblock 5 viewed from the exposure device 6. A connection opening 121 bthat communicates with the thermal processing group 121 forpost-exposure bake of the development processing block 4 is arranged onthe −X side in the interface block 5. The interface block 5 has thevertical stack of the edge exposure unit EEW and the back surfacecleaning processing unit RSW in its upper part on the +X side.

The interface block 5 has the vertical stack of the sending buffer unitSBF, the return buffer unit RBF, the substrate platforms PASS8, PASS9,and the cooling unit CP at substantially the center thereof below theedge exposure unit EEW.

The interface transport mechanisms IFR1, IFR2 are provided in a lowerpart of the interface block 5. Description will be made of theconfigurations of the interface transport mechanisms IFR1, IFR2.

The interface transport mechanism IFR2 includes a base B2, a support S2,a lifting shaft T2, an arm A2 and a motor M2. The support S2 is mountedon the base B2 so as to be rotatable in the ±θ direction and movable upand down in the ±Z direction. The support S2 is coupled to the motor M2in the base B2 through the lifting shaft T2, and rotated by the motorM2. The two hands H21, H22 that hold the substrate W in a horizontalattitude are provided one above the other in the support S2 through thearm A2 so as to be movable back and forth. Here, the hand H21 is in aposition higher than the hand H22.

The interface transport mechanism IFR2 is configured to be able totransport the substrate W among the connection opening 121 b, the edgeexposure unit EEW, the sending buffer unit SBF, the return buffer unitRBF, the substrate platforms PASS8, PASS9 and the cooling unit CP.

The interface transport mechanism IFR1 includes a base B1, a support S1,a lifting shaft T1, an arm A1 and a motor M1. The support S1 is mountedon the base B1 so as to be rotatable in the ±θ direction and movable upand down in the ±Z direction. The support S1 is coupled to the motor M1in the base B1 through the lifting shaft T1, and rotated by the motorM1. The three hands H11, H12, H13 that hold the substrate W in ahorizontal attitude are provided one above another in the support S1through the arm A1 so as to be movable back and forth. Here, the handH11 is in a position higher than the hand H12, and the hand H12 is in aposition higher than the hand H13.

The interface transport mechanism IFR1 is configured to be able totransport the substrate W among the back surface cleaning processingunit RSW, the sending buffer unit SBF, the return buffer unit RBF, thesubstrate platforms PASS8, PASS9 and the cooling unit CP.

(2) Operation of the Substrate Processing Apparatus

Next, description will be made of the operation of the substrateprocessing apparatus 500 according to the present embodiment whilereferring to FIGS. 1 to 4.

(2-1) Operation in the Indexer Block to the Development Processing Block

First, brief description will be made of the operations of the indexerblock 1, the anti-reflection film processing block 2, the resist filmprocessing block 3 and the development processing block 4.

Carriers C each storing a plurality of substrates W in multiple stagesare respectively carried onto the carrier platforms 92 in the indexerblock 1. The indexer robot IR takes out the unprocessed substrate W thatis stored in the carrier C using the hand IRH1. Thereafter, the indexerrobot IR rotates in the ±θ direction while moving in the ±X direction,and places the unprocessed substrate W on the substrate platform PASS1.

Although FOUPs (Front Opening Unified Pods) are adopted as the carriersC in the present embodiment, the present invention is not limited tothis. For example, SMIF (Standard Mechanical Inter Face) pods, OCs (OpenCassettes) that expose the stored substrates W to outside air, or thelike may be used.

Furthermore, although linear-type transport robots that move their handsforward and backward by linearly sliding them to the substrate W arerespectively used as the indexer robot IR, the first to third centralrobots CR1 to CR3, and the interface transport mechanisms IFR1, IFR2,the present invention is not limited to this. For example, multi-jointtype transport robots that linearly move their hands forward andbackward by moving their joints may be used.

The unprocessed substrate W placed on the substrate platform PASS1 isreceived by the first central robot CR1 in the anti-reflection filmprocessing block 2. The first central robot CR1 carries the substrate Win the thermal processing group 100 or 101 for anti-reflection film.

Thereafter, the first central robot CR1 takes out the substrate W afterthe thermal processing from the thermal processing group 100 or 101 foranti-reflection film and carries the substrate W into the coatingprocessing group 20 for anti-reflection film. In the coating processinggroup 20 for anti-reflection film, the coating unit BARC forms a coatingof an anti-reflection film on the substrate W in order to reducestanding waves and halation to be generated during the exposureprocessing.

The first central robot CR1 then takes out the substrate W after thecoating processing from the coating processing group 20 foranti-reflection film and carries the substrate W into the thermalprocessing group 100 or 101 for anti-reflection film. Thereafter, thefirst central robot CR1 takes out the substrate W after the thermalprocessing from the thermal processing group 100 or 101 foranti-reflection film and places the substrate W on the substrateplatform PASS3.

The substrate W placed on the substrate platform PASS3 is received bythe second central robot CR2 in the resist film processing block 3. Thesecond central robot CR2 carries the substrate W into the thermalprocessing group 110 or 111 for resist film.

Thereafter, the second central robot CR2 takes out the substrate W afterthe thermal processing from the thermal processing group 110 or 111 forresist film and carries the substrate W into the coating processinggroup 30 for resist film. In the coating processing group 30 for resistfilm, the coating unit RES forms a coating of a resist film on thesubstrate W that has been coated with the anti-reflection film.

The second central robot CR2 then takes out the substrate W after thecoating processing from the coating processing group 30 for resist filmand carries the substrate W into the thermal processing group 110 or 111for resist film. Thereafter, the second central robot CR2 takes out thesubstrate W after the thermal processing from the thermal processinggroup 110 or 111 for resist film and places the substrate W on thesubstrate platform PASS5.

The substrate W placed on the substrate platform PASS5 is received bythe third central robot CR3 in the development processing block 4. Thethird central robot CR3 places the substrate W on the substrate platformPASS7.

The substrate W placed on the substrate platform PASS7 is received bythe interface transport mechanism IFR2 in the interface block 5 throughthe connection opening 121 b of FIG. 4, and is subjected to givenprocessing in the interface block 5 and the exposure device 6, asdescribed below. After the substrate W is subjected to the givenprocessing in the interface block 5 and the exposure device 6, theinterface transport mechanism IFR2 carries the substrate W into thethermal processing group 121 for post-exposure bake in the developmentprocessing block 4 of FIG. 1 through the connection opening 121 b.

In the thermal processing group 121 for post-exposure bake, thesubstrate W is subjected to post-exposure bake (PEB). Thereafter, thethird central robot CR3 in the development processing block 4 takes outthe substrate W from the thermal processing group 121 for post-exposurebake, and carries the substrate W into the development processing group40. In the development processing group 40, the substrate W after theexposure processing is subjected to development processing.

The third central robot CR3 then takes out the substrate W after thedevelopment processing from the development processing group 40 andcarries the substrate W into the thermal processing group 120 fordevelopment. The third central robot CR3 subsequently takes out thesubstrate W after the thermal processing from the thermal processinggroup 120 for development, and places the substrate Won the substrateplatform PASS6.

The substrate W placed on the substrate platform PASS6 is placed on thesubstrate platform PASS4 by the second central robot CR2 in the resistfilm processing block 3.

The substrate W placed on the substrate platform PASS4 is placed on thesubstrate platform PASS2 by the first central robot CR1 in theanti-reflection film processing block 2.

The substrate W placed on the substrate platform PASS2 is stored in thecarrier C by the indexer robot IR in the indexer block 1. Thus, theprocessing on the substrate W is finished in the substrate processingapparatus 500.

(2-2) Schematic Operation of the Interface Block

Details of the operation of the interface block 5 will be thendescribed.

As described in the foregoing, the substrate W carried in the indexerblock 1 is subjected to the given processing, and then placed on thesubstrate platform PASS7 in the development processing block 4 (see FIG.1).

The interface transport mechanism IFR2 of FIG. 4 takes out the substrateW from the substrate platform PASS7 and transports the substrate W tothe edge exposure unit EEW through the connection opening 121 b usingthe hand H21. The edge of the substrate W is subjected to exposureprocessing in the edge exposure unit EEW.

The interface transport mechanism IFR2 takes out the substrate W whoseedge has been subjected to the exposure processing from the edgeexposure unit EEW and transports the substrate W to substrate platformPASS8 using the hand H22.

At this time, when processing speed of the exposure device 6 is notsufficiently high, the substrate W before the exposure processing mayexist on the substrate platform PASS8. In this case, the interfacetransport mechanism IFR2 may transport the substrate W taken out fromthe edge exposure unit EEW to the sending buffer unit SBF using the handH22. The substrate W is temporarily stored in the sending buffer unitSBF. After the substrate W before the exposure processing is transportedfrom the substrate platform PASS8 to the back surface cleaningprocessing unit RSW, the interface transport mechanism IFR2 takes outthe substrate W from the sending buffer unit SBF and transports thesubstrate W to the substrate platform PASS8 using the hand H22 asdescribed below.

The substrate W after the exposure processing is placed on the substrateplatform PASS9 as described below. The hand H22 of the interfacetransport mechanism IFR2 takes out the substrate W from the substrateplatform PASS9, and transports the substrate W to the heating unit HP(see FIG. 1) of the thermal processing group 121 for post-exposure bakein the development processing block 4 through the connection opening 121b.

Here, when the thermal processing group 121 for post-exposure bake istemporarily not capable of receiving the substrate W, the interfacetransport mechanism IFR2 may take out the substrate W from the substrateplatform PASS9 and transport the substrate W to the return buffer unitRBF using the hand H22. In this case, the substrate W is temporarilystored in the return buffer unit RBF. After the thermal processing group121 for post-exposure bake becomes capable of receiving the substrate W,the interface transport mechanism IFR2 takes out the substrate W fromthe return buffer unit RBF and transports the substrate W into thethermal processing group 121 for post-exposure bake through theconnection opening 121 b using the hand H22.

The interface transport mechanism IFR2 may transport the substrate Wfrom the substrate platform PASS9 to the thermal processing group 121for post-exposure bake using the hand H21 instead of the hand H22.

The interface transport mechanism IFR2 repeats the foregoing operations.Accordingly, processes of transporting the substrate W from thesubstrate platform PASS7 of FIG. 1 to the edge exposure unit EEW,transporting the substrate W from the edge exposure unit EEW to thesubstrate platform PASS8 and transporting the substrate W from thesubstrate platform PASS9 to the heating unit HP of the thermalprocessing group 121 for post-exposure bake are repeated.

Meanwhile, the interface transport mechanism IFR1 takes out thesubstrate W from the substrate platform PASS8 and transports thesubstrate W to the back surface cleaning processing unit RSW using thehand H13. The back surface cleaning processing of the substrate W beforethe exposure processing is performed in the back surface cleaningprocessing unit RSW as described above.

The interface transport mechanism IFR1 takes out the substrate W afterthe back surface cleaning processing and the drying processing from theback surface cleaning processing unit RSW, and transports the substrateW to the cooling unit CP using the hand H12. The substrate W transportedto the cooling unit CP is adjusted to the same temperature as that inthe inside of the exposure device 6 or a temperature (20 to 23° C., forexample) that is higher than that in the inside of the exposure device6. The substrate W is adjusted to the same temperature as that in theinside of the exposure device 6, thereby preventing the substrate W frombeing deformed at the time of being carried in the exposure device 6 dueto a difference in temperature between the inside and outside of theexposure device 6. When the temperature of the substrate W decreases inthe exposure device 6, the substrate W is adjusted to a temperaturehigher than the temperature in the inside of the exposure device 6, sothat the substrate W can be prevented from being deformed at the time ofbeing carried in the exposure device 6 due to a difference intemperature between the inside and outside of the exposure device 6.

The inside of the cooling unit CP is filled with dry nitrogen gas. Thesubstrate W is dried in the atmosphere of dry nitrogen gas, so thatmoisture adhering to the substrate W is sufficiently removed. Detailswill be described below.

The interface transport mechanism IFR1 takes out the substrate W whichis maintained at the given temperature and from which moisture has beenremoved by the dry nitrogen gas from the cooling unit CP, and transportsthe substrate W to a substrate carry-in section 6 a (see FIG. 1) in theexposure device 6 using the hand H11. The substrate W is subjected tothe exposure processing in the exposure device 6.

As described above, the different hands H11, H12 are used for holdingand transporting the substrate W from the back surface cleaningprocessing unit RSW to the cooling unit CP and for holding andtransporting the substrate W from the cooling unit CP to the exposuredevice 6. Thus, the temperature of the hand H11 holding the substrate Wwhose temperature has been adjusted is kept constant. This prevents thetemperature of the substrate W from changing when the substrate W istransported from the cooling unit CP to the exposure device 6.

The interface transport mechanism IFR1 takes out the substrate W afterthe exposure processing from a substrate carry-out section 6 b (seeFIG. 1) of the exposure device 6, and transports the substrate W to thesubstrate platform PASS9 using the hand H13.

The interface transport mechanism IFR1 repeats the foregoing operations.Accordingly, processes of transporting the substrate W from thesubstrate platform PASS8 to the back surface cleaning processing unitRSW, transporting the substrate W from the back surface cleaningprocessing unit RSW to the cooling unit CP, transporting the substrate Wfrom the cooling unit CP to the substrate carry-in section 6 a of theexposure device 6 and transporting the substrate W from the substratecarry-out section 6 b of the exposure device 6 to the substrate platformPASS9 are repeated.

(3) The Back Surface Cleaning Processing Unit

Next, description will be made of details of the back surface cleaningprocessing unit RSW.

(3-1) The Configuration

FIG. 5 is a diagram for use in illustrating the configuration of theback surface cleaning processing unit RSW.

As shown in FIG. 5, the back surface cleaning processing unit RSWincludes a spin chuck 721 for holding the substrate W horizontally androtating the substrate W around the vertical rotation axis passingthrough the center of the substrate W. In the back surface cleaningprocessing unit RSW, the spin chuck 721 holds an end surface of thesubstrate W by a plurality of holding pins 722. The spin chuck 721 isfixed to an upper end of a lifting shaft 725 rotated by a chuck rotationdriving mechanism 736.

An arm driving device 710 is provided outside the spin chuck 721. Alifting shaft 711 is connected to the arm driving device 710.Furthermore, an arm 712 is coupled to the lifting shaft 711 so as toextend in the horizontal direction, and its tip is provided with abrushing device 713. The brushing device 713 includes a brush 714 thatis directed downward, and a brushing motor 715 that rotates the brush714.

The arm driving device 710 causes the lifting shaft 711 to rotate whilecausing the arm 712 to swing. This causes the brushing device 713 tomove to a position above the substrate W held on the spin chuck 721. Thearm driving device 710 moves the lifting shaft 711 and the arm 712 upand down, and the brush 714 of the brushing device 713 moves in adirection closer to or away from the substrate W.

A substrate reversing device 760 is provided outside the spin chuck 721.The substrate reversing device 760 includes a lifting driving device761. A lifting shaft 762 is provided in the lifting driving device 761,and a chuck opening/closing device 763 is attached to an upper end ofthe lifting shaft 762. A pair of chucks 764, 765 for holding thesubstrate W is attached to the chuck opening/closing device 763.

The lifting shaft 762 is moved in a vertical direction by the liftingdriving device 761. As the lifting shaft 762 moves, the chucks 764, 765move in the vertical direction between a position at the same height asthe substrate W on the spin chuck 721 (hereinafter referred to as asubstrate holding position) and a position above the spin chuck 721(hereinafter referred to as a substrate reversing position). Thesubstrate reversing device 760 can reverse the substrate W 180 degreesat the substrate reversing position. Details of the substrate reversingdevice 760 will be described below.

Outside the spin chuck 721, a cleaning liquid supply nozzle 751 and aninert gas supply nozzle 752 are provided in respective positions in anobliquely upward direction from the spin chuck 721. The cleaning liquidsupply nozzle 751 and the inert gas supply nozzle 752 are arranged so asnot to inhibit the substrate reversing device 760 from moving up anddown. The cleaning liquid supply nozzle 751 is connected to a cleaningliquid supply source R1 through a cleaning liquid supply pipe 753 and avalve Vd. The inert gas supply nozzle 752 is connected to an inert gassupply source R3 through an inert gas supply pipe 754 and a valve Ve.

An amount of a cleaning liquid supplied to the cleaning liquid supplypipe 753 can be adjusted by controlling the opening/closing of the valveVd. The cleaning liquid is supplied from the cleaning liquid supplysource R1 to the cleaning liquid supply nozzle 751 through the cleaningliquid supply pipe 753. This allows the cleaning liquid to be suppliedonto the substrate W. Examples of the cleaning liquid include purewater, a pure water solution containing a complex (ionized), or afluorine-based chemical solution.

An amount of inert gas supplied to the inert gas supply pipe 754 can beadjusted by controlling the opening/closing the valve Ve. The inert gasis supplied from the inert gas supply source R3 to the inert gas supplynozzle 752 through the inert gas supply pipe 754. This allows the inertgas to be supplied onto the substrate W. Examples of the inert gasinclude nitrogen gas.

The substrate W held on the spin chuck 721 is housed in a processing cup723. A cylindrical partition wall 733 is provided inside the processingcup 723. A liquid discharge space 731 for discharging the cleaningliquid used for processing the substrate W is formed so as to surroundthe spin chuck 721. Further, a liquid recovery space 732 for recoveringthe cleaning liquid used for the back surface cleaning processing of thesubstrate W is formed between the processing cup 723 and the partitionwall 733 so as to surround the liquid discharge space 731.

A liquid discharge pipe 734 for introducing the cleaning liquid into aliquid discharge processing device (not shown) is connected to theliquid discharge space 731. A recovery pipe 735 for introducing thecleaning liquid into a recovery processing device (not shown) isconnected to the liquid recovery space 732.

A guard 724 is provided above the processing cup 723 for preventing thecleaning liquid on the substrate W from being splashed outward. Theguard 724 is shaped to be rotationally-symmetric with respect to thelifting shaft 725. An annular-shaped liquid discharge guide groove 741with a V-shaped cross section is formed inwardly at an upper end of theguard 724.

Furthermore, a liquid recovery guide 742 having an inclined surface thatis inclined outwardly downward is formed inwardly at a lower end of theguard 724. A partition wall housing groove 743 for receiving thepartition wall 733 in the processing cup 723 is formed in the vicinityof an upper end of the liquid recovery guide 742.

This guard 724 is provided with a guard lifting driving mechanism (notshown) composed of a ball-screw mechanism and so on. The guard liftingdriving mechanism moves the guard 724 up and down.

Here, the cleaning liquid splashed outward from the substrate W isintroduced to the liquid recovery space 732 by the liquid recovery guide742 and recovered through the recovery pipe 735 when the liquid recoveryguide 742 is opposite to an outer circumference of the substrate W heldon the spin chuck 721 (in a state of the guard 724 shown in FIG. 5).Hereinafter, such a position of the guard 724 is referred to as arecovery position.

The cleaning liquid splashed outward from the substrate W is introducedto the liquid discharge space 731 by the liquid discharge guide groove741 and discharged through the liquid discharge pipe 734 when the liquiddischarge guide groove 741 is opposite to the outer circumference of thesubstrate W held on the spin chuck 721. Hereinafter, such a position ofthe guard 724 is referred to as a liquid discharge position.

When the substrate W on the spin chuck 721 is carried in or out, theheight of the upper end of the guard 724 is lower than the height of thesubstrate W held on the spin chuck 721. Hereinafter, such a position ofthe guard 724 is referred to as a carry-in/out position.

The guard 724 moves up and down between the carry-in/out position andthe liquid discharge position in the present embodiment.

(3-2) Details of the Substrate Reversing Device

Description will be made of details of the chuck opening/closing device763 and the chucks 764, 765 of the substrate reversing device 760. FIG.6 (a) is a top view of the chuck opening/closing device 763 and thechucks 764, 765 shown in FIG. 5, and FIG. 6 (b) is a sectional view ofthe chuck opening/closing device 763 and the chucks 764, 765 shown inFIG. 6 (a) taken along the line A-A.

As shown in FIG. 6 (a), each of the chucks 764, 765 has a substantiallycircular arc shape along the end surface of the substrate W. The chucks764, 765 are arranged symmetrically with each other with the substrate Wtherebetween, and slightly shifted in the vertical direction as shown inFIG. 6 (b). Two support members 768 are provided to project from onesurface (a lower surface in FIG. 6 (b)) of the chuck 764, and twosupport members 768 are provided to project from one surface (an uppersurface in FIG. 6 (b)) of the chuck 765. Each of the support members 768is composed of a support portion 768 a in the shape of a circulartruncated cone and a support portion 768 b in the shape of an invertedcircular truncated cone that are integrally formed. A groove is formedbetween the support portions 768 a, 768 b, and the end surface of thesubstrate W is held by the groove. Each support member 768 is made offluororesin, for example.

The chucks 764, 765 are connected to the chuck opening/closing device763 through respective supports 766, 767. The chucks 764, 765 are movedby the chuck opening/closing device 763 in directions closer to and awayfrom each other (see the arrow M1 of FIG. 6 (a)). Hereinafter, a statewhere the chucks 764, 765 are farthest away from each other is referredto as an open state.

The chuck opening/closing device 763 includes a motor that is not shown,and is capable of rotating 180 degrees the chucks 764, 765 around anaxial center J1 extending in a horizontal direction.

(3-3) Operation

Description will be made of the processing operation of the back surfacecleaning processing unit RSW having the above-described configuration.Operations of components in the back surface cleaning processing unitRSW described below are controlled by the main controller (control unit)91 of FIG. 1.

At the time of carrying in the substrate W, the guard 724 moves to theforegoing carry-in/out position and the interface transport mechanismIFR1 (the interface transport mechanism IFR2 in a second embodimentdescribed below) of FIG. 1 places the substrate W on the spin chuck 721.At this time, the top surface of the substrate W is directed upward.

Next, the chucks 764, 765 in the open state are lowered to the foregoingsubstrate holding position. The chucks 764, 765 are then moved in thedirection closer to each other by the chuck opening/closing device 763.Thus, the support members 768 of the chucks 764, 765 abut against theend surface of the substrate W, and the substrate W is held by thechucks 764, 765.

The chucks 764, 765 are subsequently lifted to the foregoing substratereversing position. The chucks 764, 765 are rotated 180 degrees by thechuck opening/closing device 763. Thus, the substrate W is reversed, andthe back surface of the substrate W is directed upward.

Next, the chucks 764, 765 are lowered to the substrate holding positionwhile keeping the foregoing state. The chucks 764, 765 are then broughtinto the open state. This causes the substrate W to be placed on thespin chuck 721 with its back surface directed upward. The end surface ofthe substrate W is subsequently held by the holding pins 722. Meanwhile,the chucks 764, 765 are retracted to a position above the substrate W.

The guard 724 then moves to the foregoing liquid discharge positionwhile the lifting shaft 725 rotates. The substrate W held on the spinchuck 721 rotates according to the rotation of the lifting shaft 725. Atthis time, the brush 714 moves to a position above the center of thesubstrate W.

Next, the cleaning liquid is discharged from the cleaning liquid supplynozzle 751 onto the back surface of the substrate W, and the brush 714is lowered while rotating to abut against the back surface of thesubstrate W. Accordingly, the back surface of the substrate W is cleanedby the brush 714.

After an elapse of a given period of time, the supply of the cleaningliquid is stopped and the brush 714 moves outward from the substrate W.Then, the number of rotations of the lifting shaft 725 is increased.This causes the cleaning liquid on the substrate W to be removed by acentrifugal force.

The inert gas is subsequently discharged from the inert gas supplynozzle 752 onto the back surface of the substrate W. Accordingly, theback surface of the substrate W is reliably dried. The supply of theinert gas is stopped, and the rotation of the lifting shaft 725 isstopped after an elapse of a given period of time. The guard 724 movesto the carry-in/out position.

The substrate W held on the spin chuck 721 is then released, and thesubstrate W is held by the chucks 764, 765 of the substrate reversingdevice 760, and the substrate W is again reversed in the substratereversing position, similarly to the foregoing. This causes the topsurface of the substrate W to be directed upward.

Then, the substrate W is placed on the spin chuck 721, and carried fromthe back surface cleaning processing unit RSW by the hand H12 of theinterface transport mechanism IFR1 of FIG. 1 (the hand H21 of theinterface transport mechanism IFR2 in the second embodiment describedbelow). Accordingly, the back surface cleaning processing and the dryingprocessing of the substrate W in the back surface cleaning processingunit RSW are finished. It is preferable that the position of the guard724 during the back surface cleaning processing and the dryingprocessing is suitably changed according to the necessity to recover ordischarge the cleaning liquid.

A rinse liquid may be supplied onto the back surface of the substrate Wafter the back surface of the substrate W is cleaned by the brush 714.Any of pure water, carbonated water, hydrogen water, electrolytic ionicwater and HFE (hydrofluoroether) is used as the rinse liquid, forexample. In this case, the cleaning liquid is washed away by the rinseliquid, thus more reliably preventing the cleaning liquid from remainingon the substrate W.

While the cleaning liquid supply nozzle 751 and the inert gas supplynozzle 752 are fixed in the back surface cleaning processing unit RSW inthe present embodiment, the nozzles 751 and 752 may be attached to anarm that is swung by a motor. In the case, a region in which thecleaning liquid is discharged or a region in which the inert gas isdischarged can be easily adjusted. Therefore, the back surface cleaningprocessing and the drying processing of the substrate W can beeffectively performed. For example, at the time of drying the backsurface of the substrate W, the inert gas supply nozzle 752 is movedfrom the position above the center of the substrate W to a positionabove a peripheral edge of the substrate W, so that the inert gas can besprayed to the entire back surface of the substrate W, and the cleaningliquid on the back surface of the substrate W can be more effectivelyremoved.

While the back surface cleaning processing of the substrate W isperformed using the brush 714 in the present embodiment, the backsurface cleaning processing of the substrate W may be performed usinganother method such as a high-pressure injection nozzle, an ultrasonicnozzle or a twin-fluid nozzle.

While the drying processing of the substrate W is performed by a spindrying method in the present embodiment, the drying processing of thesubstrate W may be performed by another drying method such as areduced-pressure drying method or an air knife drying method.

While the substrate W is reversed by the substrate reversing device 760and subjected to the back surface cleaning processing in the presentembodiment, the back surface cleaning processing of the substrate W maybe performed without reversing the substrate W by providing a nozzlethat discharges the cleaning liquid toward the substrate W from below ora brush that abuts against the substrate W from below.

(4) Adjustment of Amount of Moisture Adhering to the Substrate

As shown in FIG. 4, an air supply unit 61 for supplying clean air isprovided at the top in the interface block 5. An air discharge unit 62for discharging the atmosphere is provided at the bottom in theinterface block 5.

The air supply unit 61 is connected to a temperature adjustment device60 through a flow pipe 63. The temperature adjustment device 60 adjuststhe temperature and humidity of the air to preset values, and removesimpurities such as particles (dust) in the air. The air adjusted andpurified in the temperature adjustment device 60 is supplied to the airsupply unit 61 through the flow pipe 63. Accordingly, clean air whosetemperature and humidity are adjusted is supplied from the air supplyunit 61 to the interface block 5.

In this manner, the clean air whose temperature and humidity areadjusted is supplied to the interface block 5 by the temperatureadjustment device 60, thus allowing the substrate W before thepost-exposure bake to hold an appropriate amount of moisture.Accordingly, a catalytic reaction on the substrate W is appropriatelypromoted in the thermal processing group 121 for post-exposure bake.

A flow rate adjustment damper 65 is provided in a connection portionbetween the air supply unit 61 and the flow pipe 63. The flow rateadjustment damper 65 adjusts the flow rate of the air flowing from theflow pipe 63 to the air supply unit 61.

A flow pipe 64 is connected to the air discharge unit 62. The air in theinterface block 5 is discharged to the outside through the air dischargeunit 62 and the flow pipe 64. Thus, the atmosphere in the interfaceblock 5 is maintained in the clean state with the appropriatetemperature and humidity.

A flow rate adjustment damper 66 is provided in the flow pipe 64. Theflow rate adjustment damper 66 adjusts the flow rate of the air in theflow pipe 64.

The cooling unit CP in the interface block 5 is composed of a casing 53and a cooling plate 54. The cooling plate 54 is arranged within thecasing 53. The casing 53 of the cooling unit CP is connected to anitrogen supply device 70 through a flow pipe 71. Dry nitrogen gas issupplied from the nitrogen supply device 70 to the casing 53 of thecooling unit CP through the flow pipe 71. Thus, the inside of the casing53 of the cooling unit CP is filled with the dry nitrogen gas.

In this case, the substrate W transported to the cooling unit CP isdried in an atmosphere of the dry nitrogen gas, so that moistureadhering to the substrate W is sufficiently removed before the exposureprocessing. As a result, even when the substrate W is transported to thevacuum exposure device, a degree of vacuum in the vacuum exposure deviceis reliably prevented from being lowered.

A flow rate adjustment damper 73 is provided in the flow pipe 71. Theflow rate adjustment damper 73 adjusts the flow rate of air in the flowpipe 71.

According to the above-described configuration, the substrate W beforethe exposure processing can be sufficiently dried and the amount ofmoisture in the resist film on the substrate W before the post-exposurebake can be appropriately adjusted while an increase in processing costof the substrate W can be suppressed.

(5) Details of the Operations of the Interface Transport Mechanisms

Description will be made of details of the operations of the interfacetransport mechanisms IFR1, IFR2. FIG. 7 is a flowchart showing theoperations of the hands H21, H22 of the interface transport mechanismIFR2, FIG. 8 is a flowchart showing the operations of the hands H11 toH13 of the interface transport mechanism IFR1, and FIG. 9 is a diagramshowing a transport path of the substrate W in the interface block 5.The hands H21, H22 of the interface transport mechanism IFR2 and thehands H11 to H13 of the interface transport mechanism IFR1 arecontrolled by the main controller (control unit) 91.

As shown in FIGS. 7 and 9, the interface transport mechanism IFR2carries the substrate W from the substrate platform PASS 7 of thethermal processing group 121 for post-exposure bake (see FIG. 4) usingthe hand H21 (Step S1).

The interface transport mechanism IFR2 carries the substrate W from theedge exposure unit EEW using the hand H22 (Step S2). This allows thesubstrate W to be carried in the edge exposure unit EEW. The interfacetransport mechanism IFR2 then carries the substrate W held by the handH21 in the edge exposure unit EEW (Step S3).

The interface transport mechanism IFR1 carries the substrate W from thesubstrate platform PASS8 using the hand H13 (Step S11 of FIG. 8) asdescribed below. This allows the substrate W to be carried in thesubstrate platform PASS8. Next, the interface transport mechanism IFR2carries the substrate W held by the hand H22 in the substrate platformPASS8 (Step S4).

The interface transport mechanism IFR1 carries the substrate W in thesubstrate platform PASS9 using the hand H13 (Step S18 of FIG. 8) asdescribed below. The interface transport mechanism IFR2 subsequentlycarries the substrate W from the substrate platform PASS9 using the handH22 (Step S5). Then, the interface transport mechanism IFR2 carries thesubstrate W held by the hand H22 in the heating unit HP of the thermalprocessing group 121 for post-exposure bake (see FIG. 4) (Step S6). Themain controller (control unit) 91 controls the interface transportmechanism IFR2 to repeat the processes of Steps S1 to S6.

As shown in FIGS. 8 and 9, the interface transport mechanism IFR1carries the substrate W from the substrate platform PASS8 using the handH13 (Step S11).

The interface transport mechanism IFR1 carries the substrate W from theback surface cleaning processing unit RSW using the hand H12 (Step S12).This allows the substrate W to be carried in the back surface cleaningprocessing unit RSW. Then, the interface transport mechanism IFR1carries the substrate W held by the hand H13 in the back surfacecleaning processing unit RSW (Step S13).

The interface transport mechanism IFR1 carries the substrate W from thecooling unit CP using the hand H11 (Step S14). This allows the substrateW to be carried in the cooling unit CP. Next, the interface transportmechanism IFR1 carries the substrate W held by the hand H12 in thecooling unit CP (Step S15).

The interface transport mechanism IFR1 carries the substrate W from thesubstrate carry-out section 6 b of the exposure device 6 using the handH13 (Step S16). The interface transport mechanism IFR1 subsequentlycarries the substrate W held by the hand H11 in the substrate carry-insection 6 a of the exposure device 6 (Step S17).

As described above, the interface transport mechanism IFR2 carries thesubstrate W from the substrate platform PASS9 using the hand H22 (StepS5 of FIG. 7). This allows the substrate W to be carried in thesubstrate platform PASS9. The interface transport mechanism IFR1 thencarries the substrate W held by the hand H13 in the substrate platformPASS9 (Step S18). The main controller (control unit) 91 controls theinterface transport mechanism IFR1 to repeat the processes of Steps S11to S18.

(6) Effects

In the present embodiment, the substrate W is transported from the backsurface cleaning processing unit RSW to the cooling unit CP by the handH12 of the interface transport mechanism IFR1, the substrate W istransported from the cooling unit CP to the exposure device 6 by thehand H11 of the interface transport mechanism IFR1, and the substrate Wis transported from the exposure device 6 to the substrate platformPASS9 by the hand H13.

Therefore, even when contaminants adhere to the substrate W after theexposure processing, the contaminants will not adhere to the hands H11,H12 of the interface transport mechanism IFR1 that hold the substrate Wafter the back surface cleaning. This allows the substrate W in theclean state after the back surface cleaning to be carried in theexposure device 6. As a result, the inside of the exposure device 6 canbe prevented from being contaminated. Accordingly, even when theexposure processing is performed in vacuum in the exposure device 6, adegree of vacuum is prevented from being lowered due to thecontaminants.

When the inside of the exposure device 6 is contaminated, a cleanupoperation is required in order to remove the contaminants from theexposure device 6. In the case, the pressure inside the exposure device6 is returned to atmospheric pressure, and then reduced after thecleanup operation of the exposure device 6 is finished, so that theinside of the exposure device 6 is evacuated. In the present embodiment,the inside of the exposure device 6 is less contaminated, thus requiringa less frequent cleanup operation of the exposure device 6. Even whenthe cleanup operation of the exposure device 6 is performed, workingperiod of time for removing the contaminants is reduced since the insideof the exposure device 6 is less contaminated. In addition, the insideof the exposure device 6 is exposed to the air in a shorter period oftime, thus shortening a period of time for reducing the pressure andevacuating the inside of the exposure device 6. This prevents a loweroperation rate of the substrate processing apparatus.

The hand H11 of the interface transport mechanism IFR1 is arranged abovethe hand H12, and the hand H12 of the interface transport mechanism IFR1is arranged above the hand H13. When the liquid such as the rinse liquidremains on the substrate W after the back surface cleaning, the liquidmay drop from the substrate W after the back surface cleaning or thehand H12 of the interface transport mechanism IFR1 that holds thesubstrate W after the back surface cleaning. Even in such a case, thehand H11 of the interface transport mechanism IFR1 is arranged above thehand H12, so that the liquid will not adhere to the substrate W afterthe temperature adjustment held by the hand H11 of the interfacetransport mechanism IFR1. This prevents the temperature of the substrateW after the temperature adjustment from changing and prevents thesubstrate W having the liquid adhering thereto from being carried in theexposure device 6.

When the substrate W after the exposure processing is less clean thanthe substrate W before the exposure processing, the contaminants maydrop from the substrate W after the exposure processing or the hand H13of the interface transport mechanism IFR1 that holds the substrate Wafter the exposure processing. Even in such a case, the hands H11, H12of the interface transport mechanism IFR1 are arranged above the handH13, so that the contaminants will not adhere to the substrate W beforethe exposure processing held by the hands H11, H12 of the interfacetransport mechanism IFR1. This reliably prevents the substrate W to becarried in the exposure device 6 from being contaminated.

In the present embodiment, the substrate W is transported from thesubstrate platform PASS7 to the edge exposure unit EEW by the hand H21of the interface transport mechanism IFR2, and the substrate W istransported from the edge exposure unit EEW to the substrate platformPASS8 by the hand H22 of the interface transport mechanism IFR2.

This allows the interface transport mechanisms IFR1, IFR2 to beconcurrently operated. As a result, the clean substrate W can be carriedin the exposure device 6 without reducing transport efficiency of thesubstrate W.

Since the substrate W after the exposure processing can be temporarilykept on standby on the substrate platform PASS9, a period of time fortransporting the substrate W before the exposure processing and a periodof time for transporting the substrate W after the exposure processingcan be adjusted. As a result, transport efficiency of the substrate Wcan be improved, and a period of time from the exposure processing tothe subsequent processing can be appropriately adjusted.

[2] Second Embodiment

(1) Configuration of Substrate Processing Apparatus

Description will be made of a substrate processing apparatus accordingto a second embodiment by referring to differences from the substrateprocessing apparatus 500 according to the first embodiment. FIG. 10 is aschematic side view of the interface block 5 viewed from the exposuredevice 6 in the second embodiment. As shown in FIG. 10, the back surfacecleaning processing unit RSW is arranged in an upper portion on the −Xside in the interface block 5 in the present embodiment. In this case,the back surface cleaning processing unit RSW is not arranged on the +Xside.

In the present embodiment, the substrate platform PASS8 includes thecasing 53 and the cooling plate 54. The cooling plate 54 is arrangedwithin the casing 53. The substrate platform PASS8 has both thefunctions of the substrate platform and the cooling unit. In this case,the cooling unit CP may not be separately provided.

In the interface transport mechanism IFR2, three hands H21, H22, H23that hold the substrate W in a horizontal attitude are provided oneabove another in the support S2 through the arm A2 so as to be movableback and forth. Here, the hand H21 is in a position higher than the handH22, and the hand H22 is in a position higher than the hand H23.

The two hands H11, H12 that hold the substrate W in a horizontalattitude are provided one above the other in the support 51 through thearm A1 so as to be movable back and forth in the interface transportmechanism IFR1. Here, the hand H11 is in a position higher than the handH12. The hand H13 is not provided in the arm A1 in the presentembodiment.

(2) Schematic Operation of the Interface Block

In the substrate processing apparatus 500 according to the secondembodiment, the substrate W carried in the indexer block 1 is subjectedto the given processing, and then placed on the substrate platform PASS7in the development processing block 4 (see FIG. 1).

The interface transport mechanism IFR2 of FIG. 10 takes out thesubstrate W from the substrate platform PASS7 through the connectionopening 121 b and transports the substrate W to the edge exposure unitEEW using the hand H22. The exposure processing is performed on the edgeof the substrate W in the edge exposure unit EEW.

The interface transport mechanism IFR2 takes out the substrate W whoseedge has been subjected to the exposure processing from the edgeexposure unit EEW and transports the substrate W to the back surfacecleaning processing unit RSW using the hand H23. As described above, theback surface cleaning processing on the substrate W before the exposureprocessing is performed in the back surface cleaning processing unitRSW.

The interface transport mechanism IFR2 takes out the substrate W afterthe back surface cleaning processing and the drying processing from theback surface cleaning processing unit RSW and transports the substrate Wto the substrate platform PASS8 using the hand H21. The substrate Wtransported to the substrate platform PASS8 is adjusted to the sametemperature as that of the inside of the exposure device 6 or atemperature (20 to 23° C., for example) that is higher than that of theinside of the exposure device 6.

Similarly to the cooling unit CP of the interface block 5 in the firstembodiment, the inside of the substrate platform PASS8 is filled withdry nitrogen gas. The substrate W is dried in the atmosphere of drynitrogen gas, so that moisture adhering to the substrate W issufficiently removed.

The substrate W after the exposure processing is placed on the substrateplatform PASS9 as described below. The hand H23 of the interfacetransport mechanism IFR2 takes out the substrate W from the substrateplatform PASS9, and transports the substrate W to the heating unit HP(see FIG. 1) of the thermal processing group 121 for post-exposure bakein the development processing block 4 through the connection opening 121b.

The interface transport mechanism IFR2 may transport the substrate Wfrom the substrate platform PASS9 to the thermal processing group 121for post-exposure bake using the hand H22 instead of the hand H23.

The interface transport mechanism IFR2 repeats the foregoing operations.Accordingly, processes of transporting the substrate W from thesubstrate platform PASS7 of FIG. 1 to the edge exposure unit EEW,transporting the substrate W from the edge exposure unit EEW to the backsurface cleaning processing unit RSW, transporting the substrate W fromthe back surface cleaning processing unit RSW to the substrate platformPASS8, and transporting the substrate W from the substrate platformPASS9 to the heating unit HP of the thermal processing group 121 forpost-exposure bake are repeated.

Meanwhile, the interface transport mechanism IFR1 takes out thesubstrate W which is maintained at the given temperature and from whichmoisture has been removed by the dry nitrogen gas from the substrateplatform PASS8, and transports the substrate W to the substrate carry-insection 6 a (see FIG. 1) in the exposure device 6 using the hand H11.The exposure processing of the substrate W is performed in the exposuredevice 6.

The interface transport mechanism IFR1 takes out the substrate W afterthe exposure processing from the substrate carry-out section 6 b (seeFIG. 1) in the exposure device 6, and transports the substrate W to thesubstrate platform PASS9 using the hand H12.

The interface transport mechanism IFR1 repeats the foregoing operations.Accordingly, processes of transporting the substrate W from thesubstrate platform PASS8 to the substrate carry-in section 6 a of theexposure device 6 and transporting the substrate W from the substratecarry-out section 6 b of the exposure device 6 to the substrate platformPASS9 are repeated.

(3) Details of the Operations of the Interface Transport Mechanisms

Description will be made of details of the operations of the interfacetransport mechanisms IFR1, IFR2 in the second embodiment. FIG. 11 is aflowchart showing the operations of the hands H21 to H23 in theinterface transport mechanism IFR2 in the second embodiment, FIG. 12 isa flowchart showing the operations of the hands H11, H12 in theinterface transport mechanism IFR1 in the second embodiment, and FIG. 13is a diagram showing a transport path of the substrate W in theinterface block 5 in the second embodiment. The hands H21 to H23 of theinterface transport mechanism IFR2 and the hands H11, H12 of theinterface transport mechanism IFR1 are controlled by the main controller(control unit) 91.

As shown in FIGS. 11 and 13, the interface transport mechanism IFR2carries the substrate W from the substrate platform PASS7 of the thermalprocessing group 121 for post-exposure bake (see FIG. 4) using the handH22 (Step S31).

The interface transport mechanism IFR2 carries the substrate W from theedge exposure unit EEW using the hand H23 (Step S32). This allows thesubstrate W to be carried in the edge exposure unit EEW. The interfacetransport mechanism IFR2 then carries the substrate W held by the handH22 in the edge exposure unit EEW (Step S33).

The interface transport mechanism IFR2 carries the substrate W from theback surface cleaning processing unit RSW using the hand H21 (Step S34).This allows the substrate W to be carried in the back surface cleaningprocessing unit RSW. The interface transport mechanism IFR2 subsequentlycarries the substrate W held by the hand H23 in the back surfacecleaning processing unit RSW (Step S35).

The interface transport mechanism IFR1 carries the substrate W from thesubstrate platform PASS8 using the hand H11 (Step S41 of FIG. 12) asdescribed below. This allows the substrate W to be carried in thesubstrate platform PASS8. The interface transport mechanism IFR2subsequently carries the substrate W held by the hand H21 in thesubstrate platform PASS8 (Step S36).

The interface transport mechanism IFR1 caries the substrate W in thesubstrate platform PASS9 using the hand H12 (Step S44 of FIG. 12) asdescribed below. Then, the interface transport mechanism IFR2 carriesthe substrate W from the substrate platform PASS9 using the hand H23(Step S37). After that, the interface transport mechanism IFR2 carriesthe substrate W held by the hand H23 in the heating unit HP of thethermal processing group 121 for post-exposure bake (see FIG. 4) (StepS38). The main controller (control unit) 91 controls the interfacetransport mechanism IFR2 to repeat the processes of Steps S31 to S38.

As shown in FIGS. 12 and 13, the interface transport mechanism IFR1carries the substrate W from the substrate platform PASS8 using the handH11 (Step S41).

The interface transport mechanism IFR1 carries the substrate W from thesubstrate carry-out section 6 b of the exposure device 6 using the handH12 (Step S42). The interface transport mechanism IFR1 subsequentlycarries the substrate W held by the hand H11 in the substrate carry-insection 6 a of the exposure device 6 (Step S43).

As described above, the interface transport mechanism IFR2 carries thesubstrate W from the substrate platform PASS9 using the hand H23 (StepS37 of FIG. 11). This allows the substrate W to be carried in thesubstrate platform PASS9. Next, the interface transport mechanism IFR1carries the substrate W held by the hand H12 in the substrate platformPASS9 (Step S44). The main controller (control unit) 91 controls theinterface transport mechanism IFR1 to repeat the processes of Steps S41to S44.

(4) Effects

In the present embodiment, the substrate W is transported from thesubstrate platform PASS7 to the edge exposure unit EEW by the hand H22of the interface transport mechanism IFR2, the substrate W istransported from the edge exposure unit EEW to the back surface cleaningprocessing unit RSW by the hand H23 of the interface transport mechanismIFR2, and the substrate W is transported from the back surface cleaningprocessing unit RSW to the substrate platform PASS8 using the hand H21of the interface transport mechanism IFR2.

The substrate W is transported from the substrate platform PASS8 to theexposure device 6 by the hand H11 of the interface transport mechanismIFR1, and the substrate W is transported from the exposure device 6 tothe substrate platform PASS9 by the hand H12 of the interface transportmechanism IFR1.

Therefore, even when contaminants adhere to the substrate W after theexposure processing, the contaminants will not adhere to the hand H21 ofthe interface transport mechanism IFR2 and the hand H11 of the interfacetransport mechanism IFR1 that hold the substrates W after the backsurface cleaning. This allows the substrate W in the clean state afterthe back surface cleaning to be carried in the exposure device 6. As aresult, the inside of the exposure device 6 can be prevented from beingcontaminated. Accordingly, even when the exposure processing isperformed in vacuum in the exposure device 6, a degree of vacuum isprevented from being lowered due to the contaminants.

Similarly to the first embodiment, the inside of the exposure device 6is less contaminated, thus reducing a period of time required forremoving the contaminants. This prevents a lower operation rate of thesubstrate processing apparatus.

The hand H11 of the interface transport mechanism IFR1 is arranged abovethe hand H12. When the substrate W after the exposure processing is Tessclean than the substrate W before the exposure processing, thecontaminants may drop from the substrate W after the exposure processingor the hand H12 of the interface transport mechanism IFR1 that holds thesubstrate W after the exposure processing. Even in such a case, the handH11 of the interface transport mechanism IFR1 is arranged above the handH12, so that the contaminants will not adhere to the substrate W beforethe exposure processing held by the hand H11 of the interface transportmechanism IFR1. This reliably prevents the substrate W to be carried inthe exposure device 6 from being contaminated.

The hand H21 of the interface transport mechanism IFR2 is arranged abovethe hands H22, H23. When the substrate W before the back surfacecleaning held by the hands H22, H23 of the interface transport mechanismIFR2 is contaminated, the contaminants may drop from the substrate Wbefore the back surface cleaning or the hands H22, H23 of the interfacetransport mechanism IFR2 that hold the substrate W before the backsurface cleaning. Even in such a case, the hand H21 of the interfacetransport mechanism IFR2 is arranged above the hands H22, H23, so thatthe contaminants will not adhere to the substrate W after the backsurface cleaning held by the hand H21 of the interface transportmechanism IFR2. This reliably prevents the substrate W to be carried inthe exposure device 6 from being contaminated.

[3] Other Embodiments

While each of the interface transport mechanisms IFR1, IFR2 has two orthree hands in the above-described embodiments, the present invention isnot limited to this. Each of the interface transport mechanisms IFR1,IFR2 may have four or more hands. In this case, even though the numberof processing steps of the substrate is increased, the back surface ofthe substrate can be prevented from being contaminated withoutdecreasing efficiency of the substrate processing.

While the inside of the cooling unit CP or the substrate platform PASS8in the interface block 5 is filled with dry nitrogen gas in theabove-described embodiments, the present invention is not limited tothis. The inside of the cooling unit CP or the substrate platform PASS8in the interface block 5 may be filled with dry inert gas such as heliumgas or argon gas. Also in this case, moisture adhering to the substrateW is sufficiently removed. Accordingly, even when the substrate W istransported to the vacuum exposure device, a degree of vacuum in thevacuum exposure device is reliably prevented from being lowered.

When the substrate W after the back surface cleaning is sufficientlydried in the back surface cleaning processing unit RSW, dry gas may notbe supplied into the casing 53 of the cooling unit CP shown in FIG. 4 orthe casing 53 of the substrate platform PASS8 shown in FIG. 10.

When the temperature of the substrate W after the back surface cleaningin the back surface cleaning processing unit RSW is maintained at atemperature suitable for the exposure processing in the exposure device6, the cooling unit CP shown in FIG. 4 or the cooling plate 54 of thesubstrate platform PASS8 shown in FIG. 10 may not be provided. In thiscase, the interface transport mechanism IFR1 of FIG. 4 transports thesubstrate W from the back surface cleaning processing unit RSW to theexposure device 6 using the hand H21 or the hand H22.

[4] Correspondences between Elements in the Claims and Parts inEmbodiments

In the following paragraphs, non-limiting examples of correspondencesbetween various elements recited in the claims below and those describedabove with respect to various preferred embodiments of the presentinvention are explained.

In the above-described embodiments, the exposure device 6 is an exampleof an exposure device, the substrate processing apparatus 500 is anexample of a substrate processing apparatus, the substrate W is anexample of a substrate, the indexer block 1, the anti-reflection filmprocessing block 2, the resist film processing block 3 and thedevelopment processing block 4 are an example of a processing section,the interface block 5 is an example of an interface, the resist filmcoating processing unit 30 is an example of a photosensitive filmforming unit, the back surface cleaning processing unit RSW is anexample of a back surface cleaning unit, the hands H11 to H13, H21 toH23 are examples of a holder, the interface transport mechanisms IFR1,IFR2 are examples of a transport device, the casing 53 is an example ofa housing, dry nitrogen gas is an example of dry gas, the nitrogensupply device 70 is an example of a gas supplier, the substrate platformPASS9 is an example of a platform, the interface transport mechanismIFR1 is an example of a first transport unit, and the interfacetransport mechanism IFR2 is an example of a second transport unit.

In the first embodiment, the cooling unit CP is an example of atemperature adjuster, the hand H11 is an example of a first holder, thehand H12 is an example of a second holder, the hand H13 is an example ofa third holder, the hand H21 is an example of a fourth holder, and thehand H22 is an example of a fifth holder.

In the second embodiment, the substrate platform PASS8 is an example ofthe temperature adjuster, the hand I-III is an example of the firstholder, the hand H21 is an example of the second holder, the hand H12 isan example of the third holder, the hand H22 is an example of the fourthholder, and the hand H23 is an example of the fifth holder.

As each of various elements recited in the claims, various otherelements having configurations or functions described in the claims canbe also used.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing the scope andspirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

I claim:
 1. A substrate processing method for subjecting a substrate toprocessing using a substrate processing apparatus arranged adjacent toan exposure device, the substrate processing method comprising the stepsof: forming a photosensitive film made of a photosensitive material on atop surface of the substrate by a photosensitive film forming unit ofthe substrate processing apparatus; cleaning a back surface of thesubstrate by a back surface cleaning unit of the substrate processingapparatus after the formation of the photosensitive film and beforeexposure processing by the exposure device; transporting the substrateafter the back surface cleaning by the back surface cleaning unit to atemperature adjuster of the substrate processing apparatus while holdingthe substrate after the back surface cleaning using a first holder ofthe substrate processing apparatus; adjusting a temperature of thesubstrate by the temperature adjuster; transporting the substrate beforethe exposure processing from the temperature adjuster to the exposuredevice while holding the substrate before the exposure processing usinga second holder of the substrate processing apparatus; and transportingthe substrate after the exposure processing from the exposure device toa first platform of the substrate processing apparatus while holding thesubstrate after the exposure processing using a third holder of thesubstrate processing apparatus.
 2. The substrate processing methodaccording to claim 1, further comprising the step of transporting thesubstrate after the exposure processing from the first platform to athermal processing group of the substrate processing apparatus whileholding the substrate after the exposure processing using a fourthholder of the substrate processing apparatus.
 3. The substrateprocessing method according to claim 2, further comprising the step oftransporting the substrate placed on a second platform of the substrateprocessing apparatus to the back surface cleaning unit while holding thesubstrate placed on the second platform using the third holder, afterthe formation of the photosensitive film and before the cleaning of theback surface of the substrate by the back surface cleaning unit.
 4. Thesubstrate processing method according to claim 3, further comprising thesteps of: exposing an edge of the substrate by an edge exposure unit ofthe substrate processing apparatus after the formation of thephotosensitive film and before the substrate is placed on the secondplatform; and transporting the substrate after the edge exposure by theedge exposure unit to the second platform while holding the substrateafter the edge exposure using the fourth holder.
 5. The substrateprocessing method according to claim 4, further comprising the step oftransporting the substrate after the formation of the photosensitivefilm and before the edge exposure by the edge exposure unit to the edgeexposure unit while holding the substrate using a fifth holder of thesubstrate processing apparatus.
 6. The substrate processing methodaccording to claim 2, further comprising the steps of: exposing an edgeof the substrate by an edge exposure unit of the substrate processingapparatus after the formation of the photosensitive film and before thecleaning of the back surface of the substrate by the back surfacecleaning unit; and transporting the substrate after the edge exposure bythe edge exposure unit to the back surface cleaning unit while holdingthe substrate using the fourth holder.
 7. The substrate processingmethod according to claim 6, further comprising the step of transportingthe substrate after the formation of the photosensitive film and beforethe edge exposure by the edge exposure unit to the edge exposure unitwhile holding the substrate using a fifth holder of the substrateprocessing apparatus.
 8. The substrate processing method according toclaim 1, wherein the temperature adjuster includes: a housing arrangedto surround the substrate, and a gas supplier arranged to supply dry gasinto the housing.
 9. The substrate processing method according to claim1, wherein the third holder is arranged below the first and secondholders.
 10. The substrate processing method according to claim 1,wherein the second holder is arranged above the first holder.